Analytical Chemistry Core Lab
Organics
Gas Analyzer-GC-FID-TCD
This customized Gas Chromatograph is equipped with multiple columns/valves/detectors and it is mainly used for the target analysis of refinery gases and oxygenates. The established methods can provide the qualitative and quantitative analysis of light hydrocarbons (
Wasson-ECE Instrumentation/Agilent 7890B
G3440B
Building 3,
Level 3
East
Coastal and Marine Resources Core Lab
Marine Operations
Plankton net with structure 0002
Plankton nets
DIAMETER 400
MICRAS 20
KC Denmark
OBLICUAL PLANKTON NET KC DENMARK
Building 27,
Level 2
Coastal and Marine Resources Core Lab
Marine Operations
Plankton net with structure 0003
Plankton nets
DIAMETER 400
MICRAS 50
KC Denmark
OBLICUAL PLANKTON NET KC DENMARK
Building 27,
Level 2
Coastal and Marine Resources Core Lab
Marine Operations
Plankton net with structure 0004
Plankton nets
DIAMETER 400
MICRAS 50
KC Denmark
OBLICUAL PLANKTON NET KC DENMARK
Building 27,
Level 2
Analytical Chemistry Core Lab
Inorganics
Density Meter
The KEM DA 645 density/specific gravity meter measures density of liquid samples with precision in a short span of time. It is based on the oscillating U-tube technique where a U-shape tube is electronically excited to oscillate at its characteristic frequency. When filled with liquid sample, the resonant frequency changes inversely proportional to the square root of sample mass. At giving sample volume (volume of the tube is fixed), through precise measurement of the oscillation frequency the density of liquid sample is derived. Density meters using the oscillating U-tube method allow for highly accurate, reproducible and fast measurement at controlled temperature.
Kyoto Electronics
DA 645
Building 3,
Level 3
East
Nanofabrication Core Lab
Cleanroom
DEP-002 Reactive Sputter
Sputtering is a physical vapor deposition process in which positively charged ions generated in plasma are accelerated by an electrical field to strike the negative target with sufficient energy to dislodge and eject atoms from the target. The ejected atoms condense on substrate to form a thin film. Sputter machine is capable of depositing thin metallic and insulation layers less than 300 nm. The sputtering system has four magnetron sputtering cathodes which accommodate 4 inch diameter targets and can be used with DC or RF sputtering.
Available targets at present are Pt, Au, Cr and Ti.
Sample - a wide range of solid material including silicon, metal, insulator with maximum diameter of 8 inch and maximum thickness of 1 cm. Not applicable for powders, polymers, organics, carbon and toxic materials.
ESC
ESCRD4
Building 3,
Level 0
West
Analytical Chemistry Core Lab
Proteomics
Autoclave
Autoclave
Panasonic
MLS-3781L-PE
Building 2,
Level 2
East
Nanofabrication Core Lab
Cleanroom
DEP-003 Metal Sputter
Sputtering is a physical vapor deposition process in which positively charged ions generated in plasma are accelerated by an electrical field to strike the negative target with sufficient energy to dislodge and eject atoms from the target. The ejected atoms condense on substrate to form a thin film. Sputter machine is capable of depositing thin metallic and insulation layers less than 300 nm. The sputtering system has four magnetron sputtering cathodes which accommodate 4 inch diameter targets and can be used with DC or RF sputtering.
Available targets at present are Ti, Cr, SiO2, Mo.
Sample - a wide range of solid material including silicon, metal, insulator with maximum diameter of 8 inch and maximum thickness of 1 cm. Not applicable for powders, polymers, organics, carbon and toxic materials.
ESC
ESCRD4
Building 3,
Level 0
West
Nanofabrication Core Lab
Cleanroom
DEP-007 Ebeam Evaporator
E-beam evaporator is a physical vapor deposition (PVD) technique, where an intense electron beam is emitted from a filament to strike a source material and vaporize it within a vacuum environment. The vaporized atoms condense on the substrate to form a thin film. The e-beam evaporator has the capability to deposit up to four different materials (metal and oxide) without opening the chamber. Whilst the lab provides standard materials, any specific or expensive materials such as gold and platinum need to be provided by the users themselves.
Sample - a wide range of solid materials, not applicable for polymers, powders, organics and toxic materials. Maximum sample diameter is 200 mm, maximum substrate temperature is 400 deg-C.
Denton Vacuum, LLC
EXPLORER14
Building 3,
Level 0
West
Nanofabrication Core Lab
Cleanroom
BON-002 Al Wire Bonder
Model 626 is a deep access, long reach wire bonder that can operate as a ball, wedge, bump or peg bonder. It is specifically designed for applications that require bonding at extreme height differences between 1st and 2nd bond and for bonding wires to sensitive devices such as gallium arsenide FETs and LEDs.
Sample - clean metal, silicon, III-V materials. Not applicable for glass and polymers.
Hybond, Inc
626 12 10 A-2 30A 08
Building 3,
Level 0
West
Nanofabrication Core Lab
Microfluidics
Gold Wire Bonder
Model 626 is a deep access, long reach wire bonder that can operate as a ball, wedge, bump or peg bonder. It is specifically designed for applications that require bonding at extreme height differences between 1st and 2nd bond and for bonding wires to sensitive devices such as gallium arsenide FETs and LEDs.
Sample - clean metal, silicon, III-V materials. Not applicable for glass and polymers.
Hybond, Inc
626 12 10 A-2 30A 08
Building 3,
Level 0
West
Nanofabrication Core Lab
Cleanroom
BON-004 Dicing-Saw
The fully automatic wafer dicing machine model A-WD-2505 is a system for the ultra-high precision dicing of wafer and substrates sized up to 8-inch. It uses a thin two-inch blade. There are two types of blade available for dicing Silicon and glass wafers.
Sample - silicon wafer, III-V materials, glass, patterned wafers.
#saw
#cutting
#dicing
Accretech Europe GmbH
A-WD-2505
Building 3,
Level 0
West
Nanofabrication Core Lab
Cleanroom
CMP-001 Chemical Mechanical Planarizer
Chemical Mechanical Planarization (CMP) is a polishing process that utilizes an abrasive chemical slurry and mechanical process to remove unwanted materials on a silicon wafer. It can achieve a smooth surface on which further processing can be done. The wafer is pressed down to the pad by a polishing head and the head is rotated with different axis of rotation. The slurry is continuously flowed around the polishing head. The slurries available at the cleanroom are for Silicon/silicon oxide, copper and tungsten.
Sample - Silicon wafer from 3-inch to 8 inches.
#polish
#lapping
#thinning
G&P Technology
POLI-500
Building 3,
Level 0
West
Nanofabrication Core Lab
Cleanroom
BON-006 Die Attach
Accessory item of wafer dicing tool (BON-004) to move piece of diced wafer, and will be used together with BON-004.
Sample - any wafers.
Semiconductor Equipment Corp
830
Building 3,
Level 0
West
Nanofabrication Core Lab
Cleanroom
BON-001 Semi-Automated wafer Bonding system
Wafer bonding is a process by which two wafers of any materials adhere to each other either with macroscopic gluing, external force or voltage. It can be done at room temperature or elevated temperatures based on the requirement. The EVG 520IS is a semi-automated single-chamber unit with controlled piston pressure, vacuum, temperature and voltage, which can handle adhesive bonding, anodic bonding and hot embossing of 4, 6 and 8 inch wafers.
Wafer - 4, 6, or 8 inches of silicon and glass wafers.
EVG
520IS
Building 3,
Level 0
West
Nanofabrication Core Lab
Cleanroom
LIT-016 Solvent Dev/strip-6
The exposed photo-resist is dissolved by the developer and essentially the pattern on the mask is transferred to the wafer. The solvent develop hood is equipped with the standard developers like AZ, AZ400K and AZ726MIF.
Wafer - a wide range of wafers with dimensions between 1 and 8 inches.
JST Manufacturing, Inc.
ST0120A0
Building 3,
Level 0
West