This microscope provides images with greater contrast, high resolving power and darkfield images three times brighter than previous model. Used independently, or in combination with wafer loaders, this instrument performs exceptionally precise optical inspection of wafers, photo masks, reticles and other substrates.

Tystar mini TYTAN 3800 Furnace Systems are designed for Si diffusion, oxidation and LPCVD applications in semiconductor industry or R&D community. The available process capabilities in NCL are wet/dry oxidation, LTO (LPCVD), polysilicon (LPCVD), silicon nitride (LPCVD), diffusion (N+, P+) for silicon wafer size up to 8-inch.
Sample - Si wafer.

Tystar mini TYTAN 3800 Furnace Systems are designed for Si diffusion, oxidation and LPCVD applications in semiconductor industry or R&D community. The available process capabilities in NCL are wet/dry oxidation, LTO (LPCVD), polysilicon (LPCVD), silicon nitride (LPCVD), diffusion (N+, P+) for silicon wafer size up to 8-inch.
Sample - Si wafer.

Tystar mini TYTAN 3800 Furnace Systems are designed for Si diffusion, oxidation and LPCVD applications in semiconductor industry or R&D community. The available process capabilities in NCL are wet/dry oxidation, LTO (LPCVD), polysilicon (LPCVD), silicon nitride (LPCVD), diffusion (N+, P+) for silicon wafer size up to 8-inch.
Sample - Si wafer.

Instrument to measure inductance (L), capacitance (C) and resistance (R) with a frequency range between 20 Hz and 2 MHz, and a 4-digit resolution in any range. It offers basic accuracy of 0.05% with superior measurement repeatability at low and high impedance and has 201 points list sweep.
Sample - ceramics disk with two-surfaces coated with conducted electrodes. Only disk-shaped samples can be measured on this instrument.

Retsch ball mills are used to grind and mix materials that are soft, medium hard to extremely hard, brittle or fibrous. Dry and wet grinding is possible, grinding with solvents is permissible.
Sample - any powder or fibrous samples and not applicable for volatile, fuming or degassing materials.

Atomic Layer Deposition -ALD is a thin film deposition method to fabricate ultrathin, highly uniform and conformal material layers for several applications. ALD uses sequential, self-limiting and surface controlled gas phase chemical reactions to achieve control of film growth in the nanometer/sub-nanometer thickness regime. Due to the film formation mechanism in which the gas will not react until it reaches the surface, the film growth proceeds by consecutive atomic layers from the surface. ALD film is dense, crack-, defect- and pinhole-free, and its thickness and structural and chemical characteristics can be precisely controlled on the atomic scale.
ALD process is digitally repeatable and it can be performed at relatively low temperatures. The list of ALD materials is wide, ranging from e.g. oxides, nitrides, fluorides, carbides, and sulfides to ternary compounds, metals (including noble ones), hybrid materials and polymers.
ALD Material Deposition Capability at KANF:
- Aluminum Oxide
- Ruthenium Oxide
- Zinc Oxide
- Titanium Oxide / Nitride
- Tantalum Oxide / Nitride
- Hafnium Oxide
- Platinum
- Nickel Oxide
- Strontium Oxide

Sputtering is a physical vapor deposition process in which positively charged ions generated in plasma are accelerated by an electrical field to strike the negative target with sufficient energy to dislodge and eject atoms from the target. The ejected atoms condense on substrate to form a thin film. Sputter machine is capable of depositing thin metallic and insulation layers less than 300 nm. The sputtering system has three magnetron sputtering cathodes which accommodate 2 inch diameter targets and can be used with DC or RF sputtering.
This sputtering system is specific for deposition of insulator materials.
Sample - a wide range of solid materials including SiO2, TiO2, MgO, Al2O3, TiN, TiAlN, and not applicable for powders, polymers, organics, carbon or toxic materials. Substrate maximum diameter is 8 inches and thickness 1 cm.

Retsch ball mills are used to grind and mix materials that are soft, medium hard to extremely hard, brittle or fibrous. Dry and wet grinding is possible, grinding with solvents is permissible.
Sample - any powder or fibrous samples and not applicable for volatile, fuming or degassing materials.

E-beam evaporator is a physical vapor deposition (PVD) technique, where an intense electron beam is emitted from a filament to strike a source material and vaporize it within a vacuum environment. The vaporized atoms condense on the substrate to form a thin film. The e-beam evaporator has the capability to deposit up to four different materials (metal and oxide) without opening the chamber. The lab provides standard materials such as Zirconium, Indium, Tungsten, Copper, Titanium, Iron, Aluminum and Rhodium.
Sample - a wide range of solid materials, not applicable for polymers, powders, organics and toxic materials. Maximum sample diameter is 200 mm, maximum substrate temperature is 400 degC.

Sputtering is a physical vapor deposition process in which positively charged ions generated in plasma are accelerated by an electrical field to strike the negative target with sufficient energy to dislodge and eject atoms from the target. The ejected atoms condense on substrate to form a thin film. Sputter machine is capable of depositing thin metallic and insulation layers less than 300 nm. The sputtering system has three magnetron sputtering cathodes which accommodate 2 inch diameter targets and can be used with DC or RF sputtering.
This sputtering system is specific for deposition of metals.
Sample - a wide range of metal materials, not applicable for powders, polymers, organics, carbon or toxic materials. Substrate maximum diameter is 8 inches and thickness 1 cm.

The Neocera Pioneer 18 is an MBE-like pulsed laser deposition system. It is capable of fabricating epitaxial films, with thickness ranging from a few to several hundred nanometers. The system is equipped with a radiative heater capable of producing temperatures up to 850 degC. The working gas pressure is controlled via the turbo pump speed and gas flow rate, in the range of 1 to 500 mTorr.
A variety of substrates can be used. Substrates with a size up to 10x10 mm are required for a uniform thickness of the fabricated film. Rectangular double side polished substrates of 10x10 mm, 20x20 mm, or circular substrates of 2-inch diameter can be accommodated.
Target - A maximum of 6x 1-inch diameter or 3x 2-inch diameter targets can be used. A wide variety of target materials can be used, especially ceramics, and metals. Targets should be dense and have low vapour pressure. The use of powder targets is strictly forbidden.

The Neocera Pioneer 18 is an MBE-like pulsed laser deposition system. It is capable of fabricating epitaxial films, with thickness ranging from a few to several hundred nanometers. The system is equipped with a radiative heater capable of producing temperatures up to 850 degC. The working gas pressure is controlled via the turbo pump speed and gas flow rate, in the range of 1 to 500 mTorr.
A variety of substrates can be used. Substrates with a size up to 10x10 mm are required for a uniform thickness of the fabricated film. Rectangular double side polished substrates of 10x10 mm, 20x20 mm, or circular substrates of 2-inch diameter can be accommodated.
Target - A maximum of 6x 1-inch diameter or 3x 2-inch diameter targets can be used. A wide variety of target materials can be used, especially ceramics, and metals. Targets should be dense and have low vapour pressure. The use of powder targets is strictly forbidden.

Parylene is a polymer that is deposited on top of micro/nano-electronic devices and silicon wafers in order to protect them from damage due to moisture, electric, chemical, thermal or mechanical effects. Parylene is a dielectric and bio-compatible. Labcoater 2010 is a room temperature vapor phase conformal coating system to deposit Parylene under nominal vacuum. Binder solution is available for enhancing adhesion to Si wafers.
Sample - Three sample loading trays available each can hold a maximum 8-inch diameter Si wafer. Parylene-C powder is available in the lab.

Parylene is a polymer that is deposited on top of micro/nano-electronic devices and silicon wafers in order to protect them from damage due to moisture, electric, chemical, thermal or mechanical effects. Parylene is a dielectric and bio-compatible. Labcoater 2010 is a room temperature vapor phase conformal coating system to deposit Parylene under nominal vacuum. Binder solution is available for enhancing adhesion to Si wafers.
Sample - Three sample loading trays available each can hold a maximum 8-inch diameter wafer. Parylene-C powder is available in the lab.

AMST Molecular Vapor Deposition (MVD) 100E is a microprocessor controlled system that can deposit a mono-molecular layer or multi-layer film by sequential deposition of more than one monolayer. The deposition of mono-molecular layer is used to create hydrophobic, hydrophilic, antifouling or biofunctionalized surfaces, whereas multi-layer film can be used to improve interface adhesion. Presently, three precursors are available: FDTS (Perfluorodecyltrichlorosilane, hydrophobic), BTCSE (1, 2-bis (trichlorosolyl) ethane) and APTES ((3-Aminopropyl) triethoxysilane, hydrophilic). All processes are performed at 35 degC.
The process chamber can accommodate up to 12-inch wafer, or many small samples can be loaded at a time as well. Samples with photo-resist or other patterned organic layers are allowed in the system.

Diamond saw to cut samples into small pieces with thickness less than 1 cm.Sample - a wide range of wafer materials.

M-H loops measurement of a sample on a very small area, down to hundred nanometer dimension. Sample - thin films with minimum detection samples of 20 nanometer and magnetic field of up to 4600 Oe.

The Neocera Pioneer 18 is an MBE-like pulsed laser deposition system. It is capable of fabricating epitaxial films, with thickness ranging from a few to several hundred nanometers. The system is equipped with a radiative heater capable of producing temperatures up to 850 degC. The working gas pressure is controlled via the turbo pump speed and gas flow rate, in the range of 1 to 500 mTorr.
A variety of substrates can be used. Substrates with a size up to 10x10 mm are required for a uniform thickness of the fabricated film. Rectangular double side polished substrates of 10x10 mm, 20x20 mm, or circular substrates of 2-inch diameter can be accommodated.
Target - A maximum of 6x 1-inch diameter or 3x 2-inch diameter targets can be used. A wide variety of target materials can be used, especially ceramics, and metals. Targets should be dense and have low vapour pressure. The use of powder targets is strictly forbidden.

This is a one zone furnace tube used for Graphene and Carbon nanotube growth, heat treatment, syntheses or purifications of compounds. The maximum working temperature is 1200C and the maximum continuous temperature is 1100C. The suggested normal heating rate is 10C/min. Ar, H2 and CH4 gases or vacuum pump are provided to this furnace tube.
Sample - solid materials with maximum dimension of 7 cm, not applicable for liquids.