Ion Beam Etching (IBE) is a technique to etch films using a beam of charged ions in a high vacuum environment. It is an anisotropic process that reproduces the mask pattern on the product. Ions impact the exposed material with sufficient energy to dislodge atoms or molecules. The IBE allows beam energy and ion flux to be independently controlled, thereby providing better control over the process. The CAIBE has an added advantage of flowing a reactive gas (Cl2 and SF6) through a gas inlet which aids in IBE. Higher etch rates can be achieved with the CAIBE without compromising on the sidewall profile.
Wafer - a wide range of materials up to 8 inches capability.
#plasma etching
#dry etching

Deep Reactive Ion Etching is an anisotropic etch aimed at creating high aspect ratio structures in silicon. Typically the depth is several hundred microns and can be a wafer through-etch as well. Bosch process is most commonly used variant and it employs pulsed etching, alternating between a passivation layer and etch step. These steps are repeated multiple times resulting in creation of deep trenches in silicon. The tool in the NCL can also be used for cryogenic etch with the capability to go down to -150 deg-C temperature for the table. It is equipped with fluorine based reactive gases i.e. SF6 and C4F8.
Wafer - Silicon on 8-inch wafers.
#plasma etching
#dry etching

NuAire is an effective primary engineering control in obtaining the optimum product quality while reducing the potential for exposure of both product and personnel to airborne biological or particulate chemical agents in low to moderate risk-hazard research and drug preparation or product operations by monitoring and controlling real-time airflow to maintain accurate laminar airflow and a dynamic air barrier

The microscope provides images with greater contrast, high resolving power and darkfield images three times brighter than previous model. This instrument performs exceptionally precise optical inspection of wafers, photo masks, reticles and other substrates.

The microscope provides images with greater contrast, high resolving power and darkfield images three times brighter than previous model. Used independently, or in combination with wafer loaders, this instrument performs exceptionally precise optical inspection of wafers, photo masks, reticles and other substrates.

Reactive Ion Etching (RIE) is a directional process used to remove material by reactive gas discharges or ion bombardment. The process is highly controllable and can be used to etch a variety of materials including semiconductors, dielectrics and metals. RIE has the advantage of being a highly anisotropic process which allows a finer resolution and higher aspect ratios when compared with other forms of etching. This tool in the NCL is equipped with fluorine based reactive gases i.e. CF4, SF6, CHF3 and CF4.
Wafer - any material including gold, chrome and copper on 4-inch wafers
#plasma etching
#dry etching

Reactive Ion Etching (RIE) is a directional process used to remove material by reactive gas discharges or ion bombardment. The process is highly controllable and can be used to etch a variety of materials including semiconductors, dielectrics and metals. RIE has the advantage of being a highly anisotropic process which allows a finer resolution and higher aspect ratios when compared with other forms of etching. This tool in the NCL is equipped with fluorine based reactive gases i.e. CF4, SF6, CHF3 and CF4.
Wafer - Silicon, oxides and nitrides on 4-inch wafers
#plasma etching
#dry etching

Reactive Ion Etching (RIE) is a directional process used to remove material by reactive gas discharges or ion bombardment. The process is highly controllable and can be used to etch a variety of materials including semiconductors, dielectrics and metals. RIE has the advantage of being a highly anisotropic process which allows a finer resolution and higher aspect ratios when compared with other forms of etching. This tool in the NCL is equipped with fluorine based reactive gases i.e. CF4, SF6, CHF3 and CF4.
Wafer - Silicon, oxides and nitrides on 8-inch wafers
#plasma etching
#dry etching

Reactive Ion Etching (RIE) is a directional process used to remove material by reactive gas discharges or ion bombardment. The process is highly controllable and can be used to etch a variety of materials including semiconductors, dielectrics and metals. RIE has the advantage of being a highly anisotropic process which allows a finer resolution and higher aspect ratios when compared with other forms of etching. This tool in the NCL is equipped with chlorine based reactive gases i.e. Cl2, BCl3, HBr and also SF6.
Wafer - Silicon on 8-inch wafers
#plasma etching
#dry etching

Deep Reactive Ion Etching is an anisotropic etch aimed at creating high aspect ratio structures in silicon. Typically the depth is several hundred microns and can be a wafer through-etch as well. Bosch process is most commonly used variant and it employs pulsed etching, alternating between a passivation layer and etch step. These steps are repeated multiple times resulting in creation of deep trenches in silicon. The tool in the NCL can also be used for cryogenic etch with the capability to go down to -150 deg-C temperature for the table. It is equipped with fluorine based reactive gases i.e. SF6 and C4F8.
Wafer - Silicon on 4-inch wafers.
#plasma etching
#dry etch

Reactive Ion Etching (RIE) is a directional process used to remove material by reactive gas discharges or ion bombardment. The process is highly controllable and can be used to etch a variety of materials including semiconductors, dielectrics and metals. RIE has the advantage of being a highly anisotropic process which allows a finer resolution and higher aspect ratios when compared with other forms of etching. This tool in the NCL is equipped with chlorine based reactive gases i.e. Cl2, BCl3, HBr and also SF6.
Wafer - Any material reactive with chlorine on 4-inch wafers
#plasma etching
#dry etching

When an interface exists between a liquid and a solid, the angle between the surface of the liquid and the outline of the contact surface is described as the contact angle. The Kruss DSA100 uses the drop shape analysis method where the contact angle is measured using the image of a sessile drop at the points of intersection between the drop contour and the projection of the surface. The DSA100 measures the contact angle and surface free energy (SFE) of solids with the highest degree of automation possible. It also optimizes work processes in quality assurance, especially for the analysis of cleaned, pre-treated or coated solid materials.
Wafer - standard polished silicon or mirror surface, and not applicable for toxic and hazardous samples.
#metrology
#contact angle

Spectroscopic ellipsometry is a surface sensitive, non-destructive, and non-intrusive optical metrology technique widely used to determine thin film thickness and optical constants (n, k). Spectroscopic ellipsometry is ideal for a wide range of thin film applications from fields such as semiconductors, solar, optoelectronics, optical and functional coatings, surface chemistry, and biotechnology. Ellipsometry is especially suited to the characterization of semiconductors where we have massive substrates, thin film layers ranging from few nanometers to tens of micrometers and also multi-layer structures.
Sample - silicon, glass, polymers, metals.
#metrology
#film thickness

The purpose of a four-point probe is to measure the resistivity of any semiconductor material. It can measure either bulk or thin film specimens. CMT-SR2000N is a full automatic system to measure sheet resistance and resistivity for 8 inch (200mm) Silicon wafer. This system is automated and remote control is available by using a PC and exclusive software, and it provides a various data analysis functions.
Sample - films on wafers with minimum dimension of 5 x 5 mm.
#metrology
#thin film
#sheet resistance

The DektakXT stylus surface profiler is an advanced thin and thick film step height measurement tool. It could enable critical nanometer level surface measurements for the microelectronics, semiconductor, solar, LED, medical, and materials science industries. The measurement is performed electromechanically by moving a diamond-tipped stylus over the sample surface according to a user-defined scan length, speed, and stylus force. The stylus is linked to a Linear Variable Differential Transformer (LDVT), which produces and processes electrical signals that correspond to surface variations of the sample.

Wafer - Silicon and glass wafer up to 6 inch. Small sample needs to be attached on full size dummy wafer. Sample heights must NOT exceed 50 mm. The surface should be free of contamination. No Hg or Ga/In contaminated samples allowed!

E-beam lithography is a mature direct writing technology that uses an accelerated beam of electrons to pattern features down to sub-10 nm on appropriate electron beam sensitive resists. The electron beam-matter interactions cause chemicals reactions or scission of bonds and therefore alter locally the solubility of the resist in certain developers, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a developer. The JEOL JBX-6300 FS it is a high throughput 100KeV machine that defines the state of the art in the field and has proven capability to print reliably structures with critical dimension down to 7-8nm thanks to the adjustable beam diameter that goes down to 2nm and the unparalleled overlay and stitching accuracy of 20nm. The tool is equipped with thermally stabilized 10position airlock that allows for long unattended exchange of wafers. Cassettes that are able to accommodate any size of wafers, from few mm up to full 6-inch wafer are available. The layouts are prepared by the BEAMER software that can handle and standard layout format (e.g. GDSII, CIF, DXF, etc).
Sample - Small piece (10mm) to a full 8-inch wafer.

The light of an ultra-short pulsed laser can be focused with a high intensity to expose a sensitive photo-resist by two-photon absorption. This process causes a chemical and/or physical change of the photoresist within a small pixel (voxel). This voxel typically is of ellipsoidal shape and is the basic building block for the fabrication of 3D structures. With the Nanoscribe 3-D lithography system, micro-structures can be rapidly fabricated with a 300 nm resolution. The available resists are IP-S, IP-Dip, IP-L and others.
Sample - standard cover slips, glass or silicon wafers with dimensions between 10 x 10 mm and 30 x 30 mm.

The FLX-2320-S is a thin-film stress measurement instrument manufactured by Toho Technology. It accurately measures the changes in the radius of curvature of the substrate caused by the deposition of a stressed thin film on the substrate. The accepted wafer size is from 4-inch to 8-inch.
Sample - not applicable for toxic and hazardous samples.
#metrology
#profiler

NewView 7300-Zygo Optical Profiler, using ZYGO's patented technology for Coherence Scanning Interferometry (CSI), is a powerful tool to characterize and quantify surface roughness, step heights, critical dimensions, and other topographical features with excellent precision and accuracy. All measurements are nondestructive, fast, and require no sample preparations. Features include profile heights ranging from < 1 nm up to 20000 um at high speeds, independent of surface texture.
Sample - silicon wafer, III-V materials. This instrument is not applicable for transparent materials or polymers.
#metrology
#profiler

The NanoSpec 6100 measures the thickness of transparent and semi-transparent thin films and film stacks through non-contact spectroscopic reflectometry. Spectroscopic reflectometry analyzes the intensity versus wavelength of light reflected from a sample to extract thickness of thin films on the sample. The automated stage and autofocus system enables rapid generation of film thickness uniformity maps. Thickness measurement is in the range from 25-200,000 A (0.0025-20 micrometers); optional UV system allowing measurements of very thin film (25A-500A).
Wafer type - silicon, glass, polymers and metals.
#metrology
#profiler
#film thickness