Reason T20 Dual head #1

After Chemical Mechanical Planarization (CMP), the surface can be contaminated with defects and slurry residues that can adversely affect further processing. They can be removed in the post-CMP cleaning step. Aqueous formulations employed for post-CMP cleaning are designed to protect the planarized metals and dielectrics preventing metal corrosion while providing a smooth defect free wafer surface.
Samples: Dunk Tanks and containers are available for sample size up to 8-inches

Reson T20 Multibeam #2

RCA clean is for removing organic residue and metal ions from Si wafer at 70+/-5 deg-C. The clean technique, also called Standard Clean (SC), actually involves the following chemical processes performed in sequence: the solution of H2O-NH4OH-H2O2 is for removing organic residue (SCA-1), HF for etching thin oxide layer, and H2O-HCl-H2O2 is for removing metal ions (SCA-2).
Samples: Dunk Tanks and containers are available for sample size up to 8-inches

RCA clean is for removing organic residue and metal ions from Si wafer at 70+/-5 deg-C. The clean technique, also called Standard Clean (SC), actually involves the following chemical processes performed in sequence: the solution of H2O-NH4OH-H2O2 is for removing organic residue (SCA-1), HF for etching thin oxide layer, and H2O-HCl-H2O2 is for removing metal ions (SCA-2).
Samples: Dunk Tanks and containers are available for sample size up to 8-inches

High concentrated Hydrofluoric acid (HF, 50%) and BOE (buffered oxide etch) are used to isotopically etch SiO2 or polysilicate glass.

For isotropic Si etching, potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH) solutions are used. The solutions temperatures vary from 60 to 95 deg-C. With Tandem4 wafer holder, 4-inch wafers can be etched with backside and edge protection, the diameter of etchant area is 86 mm, the thicknesses of the wafer can be in the range from 120 to 580 um.

The Idonus hydrofluoric acid vapor phase etcher (HF VPE) consists of a reaction chamber and a wafer holder, and is dedicated to realize HF vapour release of structures. HF evaporates at room temperature and the etching process starts spontaneously. While the etch rates are controlled by the wafer temperatures ranging from 35 to 60 deg-C, for thermal SiO2 it is about 4 to 6 um per hour around 40 deg-C.
Samples: Holders are available for sample size up to 8-inches

The following metals can be etched with relevant etchants: Al, Au, Cr, Cu, Ni, Pd, Ti and W.

Spin rinse dryers are used for cleaning, rinsing and drying of wafers after wet processing. They use de-ionized (DI) water to rinse and heated nitrogen to dry whole wafer substrates. They have programmable recipes which are optimized for efficient drying.
Sample - Full wafers loaded in cassettes ranging from 4-inch to 8-inch.

Drying MEMS in air or under vacuum can drastically alter their structures or even destroy them completely. They must therefore be dried by a gentler method. One well-known method is Critical Point Drying (CPD). The surface tension of the water, isopropanol or acetone in a micro device at the point at which it changes from the liquid phase to the gaseous phase can destroy the device through capillary forces. By increasing the pressure and temperature of the substrate it is possible to dry it without crossing a phase boundary. This is possible because once the critical point has been passed, the density of the liquid and the density of the gas are the same. A suitable transitional fluid such as CO2 whose critical point of 73.8 bar and 31 deg-C is commonly used. CPD apparatus is typically used after HF-release of a micro electro mechanical systems (MEMS) device to prevent stiction in the device.
Sample - a wide range of materials.

The JetFirst 200C system is an advanced bench-top Rapid Thermal Processing (RTP) system with multi-gas capabilities. The temperature can be increased to 1000 deg-C in several seconds by using high intensity lamps. The tool is equipped with closed loop temperature control set by either a thermocouple or optical pyrometer. RTP is widely used in semiconductor manufacturing including dopant activation, thermal oxidation and metal reflow.
Sample - silicon or glass wafer with maximum size of 6 inches. Not applicable for polymers.

The JetFirst 200C system is an advanced bench-top Rapid Thermal Processing (RTP) system with multi-gas capabilities. The temperature can be increased to 1000 deg-C in several seconds by using high intensity lamps. The tool is equipped with closed loop temperature control set by either a thermocouple or optical pyrometer. RTP is widely used in semiconductor manufacturing including dopant activation, thermal oxidation and metal reflow.
Sample - silicon or glass wafers with maximum size of 6 inches. Not applicable for polymers.

The JetFirst 200C system is an advanced bench-top Rapid Thermal Processing (RTP) system with multi-gas capabilities. The temperature can be increased to 1000 deg-C in several seconds by using high intensity lamps. The tool is equipped with closed loop temperature control set by either a thermocouple or optical pyrometer. RTP is widely used in semiconductor manufacturing including dopant activation, thermal oxidation and metal reflow.
Sample - silicon or glass wafers with maximum size of 2 inches. Not applicable for polymers.

The JetFirst 200C system is an advanced bench-top Rapid Thermal Processing (RTP) system with multi-gas capabilities. The temperature can be increased to 1000 deg-C in several seconds by using high intensity lamps. The tool is equipped with closed loop temperature control set by either a thermocouple or optical pyrometer. RTP is widely used in semiconductor manufacturing including dopant activation, thermal oxidation and metal reflow.
Sample - silicon or glass wafers with maximum size of 6 inches. Not applicable for polymers.

This instrument is used for heating or drying substrates up to 250 deg-C under vacuum (< 133pa). The oven can be programmed to ramp, dwell and cool down. Baking materials such as photoresist is possible.
Sample - any wafers but not applicable for volatile samples.

This instrument is used for heating or drying substrates up to 250 deg-C under vacuum (< 133pa). The oven can be programmed to ramp, dwell and cool down. Baking materials such as photoresist is possible.
Sample - any wafers but not applicable for volatile samples.

The Piranha clean can be applied to a large number of materials by removing metals and organic contamination. Its solution, a mixture of H2SO4 and H2O2, is highly oxidative and exothermic and their chemical reaction can bring the solution temperatures up to 120 deg-C. High concentration Hydrofluoric acid (HF, 50%) and BOE (buffered oxide etch) are used to isotopically etch SiO2 or polysilicate glass.
Samples: Dunk Tanks and containers are available for sample size up to 8-inches

The Piranha clean can be applied to a large number of materials by removing metals and organic contamination. Its solution, a mixture of H2SO4 and H2O2, is highly oxidative and exothermic and their chemical reaction can bring the solution temperatures up to 120 deg-C.
Samples: Dunk Tanks and containers are available for sample size up to 8-inches

A stereomicroscope, commonly called a dissection microscope, is a combination of two compound microscopes to allow 3D views. The two microscopes focus on the same area at slightly different angles. This microscope can produce a vertical image but it has low power and typically only magnifies below 100x. Its different magnification systems, such as single set magnification, many separate magnifications and zoom magnifications, enable individuals to perform a variety of tasks on specimens, including dissections of cells. Magnification capability is 500x.